Electronic device

ABSTRACT

An electronic device is provided. The electronic device includes a substrate, first, second, and third wires, first and second semiconductor elements, and a conductor. The first, second, and third wires are disposed on the substrate. The third wire is adjacent to the second wire. The second and third wires cross the first wire, and a width of the third wire is less than that of the second wire. The first semiconductor element is overlapped the first and third wires. The second semiconductor element is overlapped the first wire and adjacent to the first semiconductor element. The conductor is disposed below the second semiconductor element. The first and the second semiconductor element each crosses the first wire in two parts and the two parts of the second semiconductor element is less than the two parts of the first semiconductor element in distance.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation of U.S. patent application Ser. No.17/155,247, filed Jan. 22, 2021 and entitled “ELECTRONIC DEVICE”, theentirety of which is incorporated by reference herein.

BACKGROUND Technical Field

The present disclosure relates to an electronic device, and inparticular it relates to an electronic device including a structure forelectrostatic discharge (ESD) protection.

Description of the Related Art

Electronic devices such as display devices, antenna devices and sensordevices have become indispensable necessities in modern society. Withthe flourishing development of these electronic devices, consumers havehigh expectations regarding their quality, functionality, and price.

In the manufacturing process of electronic devices, static electricitymay be generated in various steps or operations. The energy generatedduring electrostatic discharge may cause damage to the electronicdevices. In particular, the damage of electrostatic discharge toelectronic devices may include electrostatic breakdown, electrostaticdust absorption, electromagnetic interference (EMI) and so on.

The developments of the structural design that can improve theelectrostatic discharge protection effect of the electronic device isstill one of the goal in the current industry.

SUMMARY

In accordance with some embodiments of the present disclosure, anelectronic device is provided. The electronic device includes asubstrate, a first wire, a second wire, a third wire, a firstsemiconductor element, a second semiconductor element, and a conductor.The first wire is disposed on the substrate. The second wire is disposedon the substrate. The third wire is disposed on the substrate andadjacent to the second wire, wherein the second wire and the third wirecross the first wire, and a width of the third wire is less than a widthof the second wire. The first semiconductor element is overlapped thefirst wire and the third wire. The second semiconductor element isoverlapped the first wire and adjacent to the first semiconductorelement. The conductor is disposed below the second semiconductorelement. The first semiconductor element and the second semiconductorelement each crosses the first wire in two parts and the two parts ofthe second semiconductor element is less than the two parts of the firstsemiconductor element in distance. The conductor is overlapped with atleast one of the two parts of the second semiconductor element.

In accordance with some embodiments of the present disclosure, anelectronic device is provided. The electronic device includes asubstrate, a first wire, a second wire, a third wire, a firstsemiconductor element, a second semiconductor element, and a thirdsemiconductor element. The first wire is disposed on the substrate. Thesecond wire is disposed on the substrate. The third wire is disposed onthe substrate and adjacent to the second wire, wherein the second wireand the third wire cross the first wire, and a width of the third wireis less than a width of the second wire. The first semiconductor elementis overlapped the first wire and the third wire. The secondsemiconductor element is overlapped the first wire and adjacent to thefirst semiconductor element. The third semiconductor element is disposedon the substrate, wherein the second semiconductor element is disposedbetween the first semiconductor element and the third semiconductorelement. The first semiconductor element and the second semiconductorelement each crosses the first wire in two parts and the two parts ofthe second semiconductor element is less than the two parts of the firstsemiconductor element in distance.

In accordance with some embodiments of the present disclosure, anelectronic device is provided. The electronic device includes asubstrate, a first wire, a second wire, a third wire, a firstsemiconductor element, and a second semiconductor element. The firstwire is disposed on the substrate. The second wire is disposed on thesubstrate. The third wire is disposed on the substrate and adjacent tothe second wire, wherein the second wire and the third wire cross thefirst wire, and a width of the third wire is less than a width of thesecond wire. The first semiconductor element is overlapped the firstwire and the third wire. The second semiconductor element is overlappedthe first wire and adjacent to the first semiconductor element. Thefirst semiconductor element and the second semiconductor element eachcrosses the first wire in two parts and the two parts of the secondsemiconductor element is less than the two parts of the firstsemiconductor element in distance. Each of the first semiconductorelement and the second semiconductor element has a first end portion anda second end portion, and the first end portion is smaller than thesecond end portion in size. A distance between the first end portion andthe second end portion of the second semiconductor element is less thana distance between the first end portion and the second end portion ofthe first semiconductor element.

A detailed description is given in the following embodiments withreference to the accompanying drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The disclosure may be more fully understood by reading the subsequentdetailed description and examples with references made to theaccompanying drawings, wherein:

FIG. 1 is a top-view diagram of an electronic device in accordance withsome embodiments of the present disclosure;

FIG. 2 is an enlarged bottom-view diagram of an area R0 of theelectronic device in FIG. 1 in accordance with some embodiments of thepresent disclosure;

FIG. 3 is an enlarged top-view diagram of an area R1 of the electronicdevice in FIG. 2 in accordance with some embodiments of the presentdisclosure;

FIG. 4 is an enlarged bottom-view diagram of an area R2 of theelectronic device in FIG. 2 in accordance with some embodiments of thepresent disclosure;

FIG. 5 is a cross-sectional diagram of the electronic device along linesegment A-A′ in FIG. 3 in accordance with some embodiments of thepresent disclosure;

FIG. 6A is a diagram showing lines of electric force between elements ofan electronic device in accordance with some embodiments of the presentdisclosure;

FIG. 6B is a diagram showing lines of electric force between elements ofan electronic device in accordance with some embodiments of the presentdisclosure;

FIG. 7 is a cross-sectional diagram of the electronic device along linesegment B-B′ in FIG. 3 in accordance with some embodiments of thepresent disclosure;

FIG. 8 is a cross-sectional diagram of the electronic device along linesegment C-C′ in FIG. 3 in accordance with some embodiments of thepresent disclosure;

FIG. 9A is a bottom-view diagram of a portion of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 9B is a top-view diagram of a portion of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 9C is a bottom-view diagram of a portion of an electronic device inaccordance with some embodiments of the present disclosure;

FIG. 10A is a diagram showing lines of electric force between elementsof an electronic device in accordance with some embodiments of thepresent disclosure;

FIG. 10B is a diagram showing lines of electric force between elementsof an electronic device in accordance with some embodiments of thepresent disclosure.

DETAILED DESCRIPTION

The electronic device of the present disclosure are described in detailin the following description. In the following detailed description, forpurposes of explanation, numerous specific details and embodiments areset forth in order to provide a thorough understanding of the presentdisclosure. The specific elements and configurations described in thefollowing detailed description are set forth in order to clearlydescribe the present disclosure. It will be apparent that the exemplaryembodiments set forth herein are used merely for the purpose ofillustration. In addition, the drawings of different embodiments may uselike and/or corresponding numerals to denote like and/or correspondingelements in order to clearly describe the present disclosure. However,the use of like and/or corresponding numerals in the drawings ofdifferent embodiments does not suggest any correlation between differentembodiments.

The descriptions of the exemplary embodiments are intended to be read inconnection with the accompanying drawings, which are to be consideredpart of the entire written description. It should be understood that thedrawings are not drawn to scale. In fact, the size of the element may bearbitrarily enlarged or reduced in order to clearly express the featuresof the present disclosure.

It should be understood that in the embodiments, relative expressionsare used. For example, “lower”, “bottom”, “higher” or “top” are used todescribe the position of one element relative to another. It should beappreciated that if a device is flipped upside down, an element that is“lower” will become an element that is “higher”. It should be understoodthat when an element or layer is referred to as being “disposed on”another element or layer, it can be directly disposed on the otherelement or layer, or intervening elements or layers may be presented. Incontrast, when an element is referred to as being “directly disposed on”another element or layer, there are no intervening elements or layerspresented.

In some embodiments of the present disclosure, terms concerningconnection, coupling and the like, such as “connected” and“interconnected”, unless otherwise specifically defined, may refer totwo structures being in direct contact, or may refer to two structuresnot being in direct contact and there are other structures between thesetwo structures. In addition, the term “electrically connected to” mayrefer to “directly electrically connected to” or “indirectlyelectrically connected to”.

In addition, it should be understood that, the ordinal numbers used inthe specification and claims, such as the terms “first”, “second”, etc.,are used to modify an element, which does not mean and represent thatthe element (or elements) has any previous ordinal number, and does notmean the order of a certain element and another element, or the order inthe manufacturing method. The use of these ordinal numbers is to make anelement with a certain name can be clearly distinguished from anotherelement with the same name. The ordinal numbers used to modify the sameelement may be different in the claims and the specification.Accordingly, the term “first element” in the specification may refer tothe “second element” in the claims.

The terms “about”, “approximately” and “substantially” typicallymean+/−10% of the stated value, or +/−5% of the stated value, or +/−3%of the stated value, or +/−2% of the stated value, or +/−1% of thestated value or +/−0.5% of the stated value. The stated value of thepresent disclosure is an approximate value. When there is no specificdescription, the stated value includes the meaning of “about”,“approximately”, or “substantially”. Furthermore, the phrase “in a rangefrom a first value to a second value” or “in a range between a firstvalue and a second value” indicates that the range includes the firstvalue, the second value, and other values between them.

Unless defined otherwise, all technical and scientific terms used hereinhave the same meaning as commonly understood by one of ordinary skill inthe art to which this disclosure belongs. It should be appreciated that,in each case, the term, which is defined in a commonly used dictionary,should be interpreted as having a meaning that conforms to the relativeskills of the present disclosure and the background or the context ofthe present disclosure, and should not be interpreted in an idealized oroverly formal manner unless so defined.

In addition, the following expression “the first element is disposed onthe second element” includes the conditions where the first element andthe second element are in direct contact, or another element is disposedbetween the first element and the second element so that they are not indirect contact. The following expression “the first element is disposedin the second element” includes the conditions where the first elementis entirely in the second element, or the first element is partially inthe second element. In accordance with some embodiments of the presentdisclosure, an electronic device is provided, and the electronic devicehas a structural design that can improve the protection effect forelectrostatic discharge (ESD).

Refer to FIG. 1 , which is a top-view diagram of an electronic device 10in accordance with some embodiments of the present disclosure. It shouldbe understood that only some of the elements of the electronic device 10are illustrated in FIG. 1 for clarity.

In accordance with some embodiments, the electronic device 10 mayinclude a display device, a tiled device, other suitable device, or acombination thereof, but it is not limited thereto. The display devicemay include a touch display device, a curved display device, or afree-shape display device. The tiled device may be, for example, a tileddisplay device. The electronic device 10 may be a bendable or flexibleelectronic device. In addition, the electronic device 10 may includelight-emitting diodes (LEDs), fluorescence material, phosphor, quantumdot (QD), another suitable material, or a combination thereof, but it isnot limited thereto. The light-emitting diode may include, for example,an inorganic light-emitting diode, an organic light-emitting diode(OLED), a mini light-emitting diode (mini LED), a micro light-emittingdiode (micro LED), or a quantum dot (QD) light-emitting diode (QLED orQDLED), or a combination thereof, but it is not limited thereto. Itshould be noted that the electronic device 10 in the present disclosurecan be any combination of the foregoing, but is not limited thereto. Inaddition, the shape of the electronic device 10 may be rectangular,circular, polygonal, a shape with curved edges, or other suitableshapes. In addition, in accordance with some embodiments, the electronicdevice 10 may have peripheral systems such as a driving system, acontrol system, a light source system, a shelf system, etc. to support adisplay device.

As shown in FIG. 1 , in accordance with some embodiments, the electronicdevice 10 may include a substrate 100, and the substrate 100 may have adisplay region DR and a peripheral region PR adjacent to the displayregion DR. In accordance with some embodiments, the peripheral region PRmay surround the display region DR. Specifically, in accordance withsome embodiments, the electronic device 10 may be a display device, forexample, an inorganic light-emitting diode display device, an organiclight-emitting diode display device, a liquid-crystal display device, ora quantum dot (QD) light-emitting diode display device.

In accordance with some embodiments, a plurality of thin-filmtransistors(not illustrated) may be disposed on the substrate 100. Inaddition, the electronic device 10 may include an opposing substrate(not illustrated) disposed opposite to the substrate 100.

In accordance with some embodiments, the material of the substrate 100may include glass, quartz, sapphire, ceramic, polyimide (PI),polycarbonate (PC), polyethylene terephthalate (PET), rubber, glassfiber, other suitable materials, or a combination thereof, but it is notlimited thereto. In accordance with some embodiments, the substrate 100may include a metal-glass fiber composite substrate, a metal-ceramiccomposite substrate, a printed circuit board, or any other suitablesubstrate, but it is not limited thereto. In addition, the transmittanceof the substrate 100 is not particularly limited. That is, the substrate100 may be a light-transmitting substrate, a semi-transmittingsubstrate, or a non-transmitting substrate.

Refer to FIG. 2 , which is an enlarged bottom-view diagram of an area R0of the electronic device 10 in FIG. 1 in accordance with someembodiments of the present disclosure. Specifically, FIG. 2 may refer tothe diagram of area R0 viewed from the backside of the electronic device10, for example, the outer side of the substrate 100. It should beunderstood that, for clarity of description, some elements of theelectronic device 10 are omitted in the figure. In accordance with someembodiments, additional features can be added to the electronic device10 described below. In accordance with some other embodiments, some ofthe features of the electronic device 10 described below may be replacedor omitted.

In accordance with some embodiments, the electronic device 10 mayinclude a first wire 202, a second wire 206, a third wire 204, and aplurality of semiconductor elements 102. The plurality of semiconductorelements 102 may include a first semiconductor element 102-1 and asecond semiconductor element 102-2. The first wire 202 may be disposedin the display region DR and the peripheral region PR, and the firstwire 202 may be partially overlapped with the semiconductor elements 102in a normal direction of the substrate 100 (e.g., the Z direction in thedrawing). As shown in FIG. 2 , in accordance with some embodiments, theelectronic device 10 may include a plurality of first wires 202 and atleast one of the first wires 202 crosses the plurality of semiconductorelements 102 in both of the display region DR and the peripheral regionPR.

In accordance with some embodiments, the first semiconductor element102-1 may be disposed in the display region DR and the secondsemiconductor element 102-2 may be disposed in the peripheral region PRand adjacent to the first semiconductor element 102-1.

In accordance with some embodiments, the plurality of semiconductorelements 102 (including the first semiconductor element 102-1 and thesecond semiconductor element 102-2) may include a semiconductormaterial. The semiconductor material may include, but is not limited to,amorphous silicon (a-Si), low temperature polysilicon (LTPS), indiumgallium zinc oxide (IGZO), metal oxides, or a combination thereof. Inaddition, in accordance with some embodiments, different semiconductorelements 102 in the electronic device 10 may be formed of differentmaterials as described above. For example, some of the semiconductorelements 102 may include low temperature polysilicon and some of thesemiconductor elements 102 may include metal oxides.

In accordance with some embodiments, the first semiconductor element102-1 in the display region DR may serve as a semiconductor layer(active layer) of a transistor and the second semiconductor element102-2 in the peripheral region PR may provide electrostatic dischargeprotection effect, but they are not limited thereto. In addition, thetransistor described herein may include, but is not limited to, atop-gate transistor, a bottom-gate transistor, a dual-gate, double-gatetransistor, or a combination thereof. In accordance with someembodiments, the first semiconductor element 102-1 and the secondsemiconductor element 102-2 may have a bent shape (e.g., a U-shape) andthe first semiconductor element 102-1 and the second semiconductorelement 102-2 may be overlapped with the first wire 202 by two parts,but it is not limited thereto.

In accordance with some embodiments, the third wire 204 may beelectrically connected to the first semiconductor element 102-1 disposedin the display region DR. Specifically, the third wire 204 may beelectrically connected to the first semiconductor element 102-1 througha via V2.

In accordance with some embodiments, the first semiconductor element102-1 may be the outmost semiconductor element in the display region DR(e.g., as shown in FIG. 1 , the outmost semiconductor element may beclosest to a side SA and a side SB of the display region DR), or thefirst or the last one semiconductor element in a row that iselectrically connected to the third wire 204. In accordance with someembodiments, as shown in FIG. 2 , the electronic device 10 may include aplurality of first semiconductor elements 102-1, and the firstsemiconductor elements 102-1 may be arranged along an extendingdirection of the third wire 204 (e.g., the Y direction in the drawing).In accordance with some embodiments, the second semiconductor element102-2 may be a semiconductor element that is closest to the firstsemiconductor element 102-1 in the peripheral region PR. In accordancewith some embodiments, as shown in FIG. 2 , the electronic device 10 mayinclude a plurality of second semiconductor elements 102-2, and thesecond semiconductor elements 102-2 may be arranged along the extendingdirection of the third wire 204. In addition, in accordance with someembodiments, the plurality of semiconductor elements 102 include a thirdsemiconductor element 102-3, the third semiconductor element 102-3 maybe the semiconductor element that is closest to the second semiconductorelement 102-2 in the peripheral region PR. In accordance with someembodiments, the electronic device 10 may also include a plurality ofthird semiconductor elements 102-3. In addition, the secondsemiconductor elements 102-2 may be disposed between the firstsemiconductor elements 102-1 and the third semiconductor elements 102-3.

In accordance with some embodiments, the first wire 202 may be a scanline, but it is not limited thereto. In accordance with someembodiments, the material of the first wire 202 may include a conductivematerial. In accordance with some embodiments, the conductive materialmay include, but is not limited to, a metal conductive material, atransparent conductive material, or a combination thereof. For example,the metal conductive material may include, but is not limited to,molybdenum (Mo), copper (Cu), aluminum (Al), tungsten (W), titanium(Ti), gold (Au), platinum (Pt), nickel (Ni), molybdenum alloy, copperalloy, aluminum alloy, tungsten alloy, titanium alloy, gold alloy,platinum alloy, nickel alloy, other suitable conductive materials, or acombination thereof. The transparent conductive material may includetransparent conductive oxide (TCO). For example, the transparentconductive oxide may include, but is not limited to, indium tin oxide(ITO), tin oxide (SnO), zinc oxide (ZnO), indium zinc oxide (IZO),indium gallium zinc oxide (IGZO), indium tin zinc oxide (ITZO), antimonytin oxide (ATO), antimony zinc oxide (AZO), other suitable transparentconductive materials, or a combination thereof.

In accordance with some embodiments, the second wire 206 and the thirdwire 204 may be partially overlapped with the first wire 202 in a normaldirection of the substrate 100 (e.g., the Z direction in the drawing).In accordance with some embodiments, the electronic device 10 mayinclude a plurality of third wires 204 disposed in the display regionDR, the third wires 204 may intersect with the first wires 202 anddefine a plurality of pixels. In accordance with some embodiments, someof the second semiconductor elements 102-2 in the peripheral region PRmay be partially overlapped with the second wire 206 in a normaldirection of the substrate 100 (e.g., the Z direction in the drawing).

In accordance with some embodiments, the second wire 206 may be a commonline, for example, a common power line, or a common voltage line. Inaccordance with some embodiments, the third wire 204 may be a data line.

In accordance with some embodiments, the material of the second wire 206and the third wire 204 may be similar to those of the first wire 202 asdescribed above, and thus will not be repeated here.

Moreover, in accordance with the embodiments of the present disclosure,a boundary of the display region DR and the peripheral region PR refersto a line that passes through a middle point M of a minimum distancebetween the first semiconductor element 102-1 and the secondsemiconductor element 102-2. In addition, the middle point M isoverlapped with the first wire 202 in the normal direction of thesubstrate 100 (e.g., the Z direction in the drawing), and the line issubstantially parallel to an extending direction of the third wire 204.

Refer to FIG. 2 , in accordance with some embodiments, the electronicdevice 10 may further include a conductor 104, and the conductor 104 maybe partially overlapped with the first wire 202 in the normal directionof the substrate 100 (e.g., the Z direction in the drawing). Inaccordance with some embodiments, the electronic device 10 may include aplurality of conductors 104, and the conductors 104 may be overlappedwith the semiconductor elements 102 in both of the display region DR andthe peripheral region PR. In accordance with some embodiments, theconductors 104 may be overlapped with a part of the semiconductorelements 102, but not overlapped with another part of the semiconductorelements 102. Specifically, the conductor 104 disposed in the peripheralregion PR may serve as an element for protecting electrostatic dischargeoccurring in the display region DR, and the details will be describedbelow. On the other hand, the conductor 104 disposed in the displayregion DR may serve as a light-shielding layer.

In accordance with some embodiments, the material of conductor 104 mayinclude a conductive material. The conductive material may be similar tothose of the first wire 202 as described above, and thus will not berepeated here.

Refer to FIG. 3 , which is an enlarged top-view diagram of an area R1 ofthe electronic device 10 in FIG. 2 in accordance with some embodimentsof the present disclosure. Specifically, FIG. 3 may refer to the diagramof area R1 viewed from the front side of the electronic device 10, forexample, the inner side of the substrate 100. It should be understoodthat, for clarity of description, some elements of the electronic device10 are omitted in FIG. 3 .

As shown in FIG. 3 , in accordance with some embodiments, the secondwire 206 may be disposed on the first wire 202 and overlapped with someof the semiconductor elements 102. Specifically, in addition to thefirst semiconductor element 102-1, the second semiconductor element102-2 and the third semiconductor element 102-3 described above, theplurality of semiconductor elements 102 may further include a fourthsemiconductor element 102-4 adjacent to the third semiconductor element102-3. The third semiconductor element 102-3 may be disposed between thesecond semiconductor element 102-2 and the fourth semiconductor element102-4. In accordance with some embodiments, as shown in FIG. 2 and FIG.3 , the second wire 206 may be partially overlapped with the secondsemiconductor element 102-2 and/or the third semiconductor element 102-3in the peripheral region PR. In accordance with some embodiments, thesecond wire 206 may be entirely overlapped with the fourth semiconductorelement 102-4 in the peripheral region PR, but it is not limitedthereto.

As shown in FIG. 2 and FIG. 3 , in accordance with some embodiments, anelectrode layer (not illustrated) may be electrically connected to thefirst semiconductor element 102-1 through a pad 106. In detail, the pad106 may be electrically connected to the first semiconductor element102-1 through a via V1, and the electrode layer may be electricallyconnected to the pad 106 through a via V3. The electrode layer may be apixel electrode of the electronic device 10, but it is not limitedthereto. In accordance with some embodiments, the conductor 104 may bedisposed below the semiconductor element 102 and partially overlappedwith the semiconductor element 102.

In addition, in accordance with some embodiments, the firstsemiconductor element 102-1 and the second semiconductor element 102-2may cross the first wire 202 in two parts respectively, and the twoparts of the second semiconductor element 102-2 in the peripheral regionPR may be less than the two parts of the first semiconductor element102-1 in the display region DR in distance. Moreover, in accordance withsome embodiments, the conductor 104 may be overlapped with at least oneof the two parts of the first semiconductor element 102-1 and/or thesecond semiconductor element 102-2.

Specifically, as shown in FIG. 3 , the first semiconductor element 102-1and the second semiconductor element 102-2 may cross the first wire 202in two parts respectively and the two parts of the second semiconductorelement 102-2 may be less than the two parts of the first semiconductorelement 102-1 in distance. More specifically, the first semiconductorelement 102-1 may cross the first wire 202 in a first part P1-1 and asecond part P1-2, and the second semiconductor element 102-2 may crossthe first wire 202 in a first part P2-1 and a second part P2-2.Moreover, a distance D2 in the X direction between the first part P2-1and the second part P2-2 may be less than a distance D1 in the Xdirection between the first part P1-1 and the second part P1-2. Itshould be noted that the X direction is a extending direction of thefirst wire 202.

In accordance with the embodiments of the present disclosure, thedistance D1 may refer to a minimum distance between the first part P1-1and the second part P1-2, and the first part P1-1 and the second partP1-2 are the portions of the first semiconductor element 102-1 that areoverlapped with the first wire 202 in the normal direction of thesubstrate 100 (e.g., the Z direction in the drawing). Similarly, inaccordance with the embodiments of the present disclosure, the distanceD2 may refer to a minimum distance between the first part P2-1 and thesecond part P2-2, and the first part P2-1 and the second part P2-2 arethe portions of the second semiconductor element 102-2 that areoverlapped with the first wire 202 in the normal direction of thesubstrate 100 (e.g., the Z direction in the drawing).

It should be noted that since distance D2 is less than distance D1,static electric charges accumulate more easily in the secondsemiconductor element 102-2 than the first semiconductor element 102-1.More specifically, static electric charges accumulate more easily at theportion of the second semiconductor element 102-2 that overlaps thefirst wire 202, and the electric field near the second semiconductorelement 102-2 is stronger than the one near the first semiconductorelement 102-1. Therefore, an electrostatic discharge is more likely tooccur at the second semiconductor element 102-2 in the peripheral regionPR than the first semiconductor element 102-1 in the display region DR.The display region DR of the electronic device 10 may be protected fromdamage due to electrostatic discharge.

Moreover, in accordance with some embodiments, the two parts of thesecond semiconductor element 102-2 may be less than half of the twoparts of the first semiconductor element 102-1 in distance.Specifically, as shown in FIG. 3 , the distance D2 between the firstpart P2-1 and the second part P2-2 may be less than half of the distanceD1 between the first part P1-1 and the second part P1-2. In accordancewith some embodiments, a ratio of the distance D2 between the two parts(i.e. the first part P2-1 and the second part P2-2) of the secondsemiconductor element 102-2 to the distance D1 between the two parts(i.e. the first part P1-1 and the second part P1-2) of the firstsemiconductor element 102-1 may be greater than or equal to 0.2 and lessthan or equal to 0.7 (i.e. 0.2≤ratio D2/D1≤0.7), or greater than orequal to 0.3 and less than or equal to 0.6, such as 0.4 or 0.5.

More specifically, in some embodiments, the distance D1 and the distanceD2 may be 8.69 micrometers (μm) and 4.05 μm respectively, and the ratioD2/D1 may be 0.466. In some embodiments, the distance D1 and thedistance D2 may be 7.72 μm and 3.76 μm respectively, and the ratio D2/D1may be 0.487. In some embodiments, the distance D1 and the distance D2may be 7.72 μm and 3.09 μm respectively, and the ratio D2/D1 may be 0.4.In some embodiments, the distance D1 and the distance D2 may be 8.59 μmand 3.48 μm respectively, and the ratio D2/D1 may be 0.405. In someembodiments, the distance D1 and the distance D2 may be 8.11 μm and 3.86μm respectively, and the ratio D2/D1 may be 0.476. In some embodiments,the distance D1 and the distance D2 may be 8.98 μm and 4.25 μmrespectively, and the ratio D2/D1 may be 0.473.

In addition, it should be noted that if the ratio of distance D2 todistance D1 is too small (for example, less than 0.2), the process formanufacturing the second semiconductor element 102-2 may becomedifficult; on the other hand, if the ratio of distance D2 to distance D1is too large (for example, greater than 0.7), there may be insufficientprotection of the display region DR against damage due to electrostaticdischarge.

Next, refer to FIG. 4 , which is an enlarged bottom-view diagram of anarea R2 of the electronic device 10 in FIG. 2 in accordance with someembodiments of the present disclosure. Specifically, FIG. 4 may refer tothe diagram of area R2 viewed from the backside of the electronic device10, for example, the outer side of the substrate 100. It should beunderstood that, for clarity of description, some elements of theelectronic device 10 are omitted in FIG. 4 .

As shown in FIG. 4 , in accordance with some embodiments, a width W1 ofthe semiconductor element 102 that is overlapped with the conductor 104and the first wire 202 may be less than a width W2 of the semiconductorelement 102 that is overlapped with the conductor 104 but not the firstwire 202.

In accordance with the embodiments of the present disclosure, the widthW1 may refer to an average width of the semiconductor element 102 thatis overlapped with the conductor 104 and the first wire 202 along thedirection substantially parallel to the extending direction of the firstwire 202 (e.g., the X direction in the drawing). Specifically, theaverage width W1 may refer to an average of an upper width Wi-1 and alower width W1-2 of the portion of the semiconductor element 102 that isoverlapped with the conductor 104 and the first wire 202. Similarly, inaccordance with the embodiments of the present disclosure, the width W2may refer to an average width of the semiconductor element 102 that isoverlapped with the conductor 104 but not the first wire 202 along thedirection substantially parallel to the extending direction of the firstwire 202 (e.g., the X direction in the drawing). Specifically, theaverage width W2 may refer to an average of an upper width W2-1 and alower width W2-2 of the portion of the semiconductor element 102 that isoverlapped with the conductor 104 but not the first wire 202.

Moreover, in accordance with the embodiments of the present disclosure,the width and the length of the component can be measured from anoptical microscope image, and the thickness of the component can bemeasured from a cross-sectional image in an electron microscope, but itis not limited thereto. In accordance with some embodiments, an opticalmicroscope (OM), a scanning electron microscope (SEM), a film thicknessprofiler (α-step), an ellipsometer or another suitable method may beused to measure the width, length, thickness of each element or thedistance between elements. Specifically, in accordance with someembodiments, a scanning electron microscope can be used to obtain anycross-sectional image including the elements to be measured, and thewidth, length, thickness or distance between the elements in the imagecan be measured.

Referring to FIG. 4 , in accordance with some embodiments, each of thefirst semiconductor element 102-1 and the second semiconductor element102-2 may have a first end portion EA and a second end portion EB, andthe first end portion EA may be smaller than the second end portion EBin size. For example, a radius of the first end portion EA may besmaller than a radius of the second end portion EB or an area of thefirst end portion EA may be smaller than an area of the second endportion EB. In accordance with some embodiments, the radius or the areacan be measured using the OM Tools software. In accordance with someembodiments, the first end portion EA may be closer to the first wire202 (the portion that the first end portion EA and the second endportion EB overlap with) than the second end portion EB along adirection that is substantially perpendicular to the extending directionof the first wire 202 (e.g., the Y direction in the drawing).Specifically, for clarity of description, the first end portion EA andthe second end portion EB of the first semiconductor element 102-1 arelabeled as EA-1 and EB-1 respectively in the figure. In accordance withsome embodiments, the via V1 may be located in the first end portionEA-1, and the via V2 may be located in the second end portion EB-1.

In addition, in accordance with some embodiments, a distance D4 betweenthe first end portion EA-2 and the second end portion EB-2 of the secondsemiconductor element 102-2 may be less than a distance D3 between thefirst end portion EA-1 and the second end portion EB-1 of the firstsemiconductor element 102-1. Specifically, the distance D3 may refer tothe distance between the two points respectively on the first endportion EA-1 and the second end portion EB-1 that are farthest away fromthe first wire 202. The distance D4 may refer to the distance betweenthe two points respectively on the first end portion EA-2 and the secondend portion EB-2 that are farthest away from the first wire 202.

It should be noted that since distance D4 is shorter than distance D3,static electric charges accumulate more easily in the secondsemiconductor element 102-2 than in the first semiconductor element102-1. More specifically, static electric charges accumulated moreeasily between the first end portion EA-2 and the second end portionEB-2 of the second semiconductor element 102-2, and the electric fieldnear the second semiconductor element 102-2 is stronger than the onenear the first semiconductor element 102-1. Therefore, an electrostaticdischarge is more likely to occur at the second semiconductor element102-2 in the peripheral region PR than at the first semiconductorelement 102-1 in the display region DR. The display region DR of theelectronic device 10 may be protected from the damage caused byelectrostatic discharge.

Moreover, in accordance with some embodiments, a ratio of the distanceD4 between the first end portion EA-2 and the second end portion EB-2 ofthe second semiconductor element 102-2 to the distance D3 between thefirst end portion EA-1 and the second end portion EB-1 of the firstsemiconductor element 102-1 may be greater than or equal to 0.4 and lessthan 1 (i.e. 0.4≤ratio D4/D3<1), or greater than or equal to 0.6 andless than or equal to 0.9, such as 0.7 or 0.8.

More specifically, in some embodiments, distance D3 and distance D4 maybe 15.57 μm and 13.08 μm respectively, and the ratio of D4 to D3 may be0.840. In some embodiments, distance D3 and distance D4 may be 13.35 μmand 11.64 μm respectively, and the ratio of D4 to D3 may be 0.872. Insome embodiments, distance D3 and distance D4 may be 14.02 μm and 10.43μm respectively, and the ratio of D4 to D3 may be 0.744. In someembodiments, distance D3 and distance D4 may be 13.34 μm and 10.21 μmrespectively, and the ratio of D4 to D3 may be 0.765. In someembodiments, distance D3 and distance D4 may be 15.05 μm and 10.53 μmrespectively, and the ratio of D4 to D3 may be 0.70. In someembodiments, distance D3 and distance D4 may be 14.92 μm and 10.49 μmrespectively, and the ratio of D4 to D3 may be 0.703.

In addition, it should be noted that if the ratio of distance D4 todistance D3 is too small (for example, less than 0.4), the process formanufacturing the second semiconductor element 102-2 may becomedifficult; on the other hand, if the ratio of distance D4 to distance D3is too large (for example, greater than 1), there may be insufficientprotection of the display region DR against damage due to electrostaticdischarge.

Furthermore, in accordance with some embodiments, the first end portionEA-2 of the second semiconductor element 102-2 may be less than thefirst end portion EA-1 of the first semiconductor element 102-1 inradius of curvature. In other words, the first end portion EA-2 may havea smaller radius of curvature than the first end portion EA-1. Inaccordance with some embodiments, a radius of curvature of the first endportion EA-2 may be greater than or equal to 0.5 μm, and less than orequal to 2 μm, but it is not limited thereto. In accordance with someembodiments, a radius of curvature of the first end portion EA-1 may begreater than or equal to 0.8 μm, and less than or equal to 3.5 μm, butit is not limited thereto. For example, the radius of curvature of thefirst end portion EA-2 is equal to 1.46 m and the radius of curvature ofthe first end portion EA-1 is equal to 2.13 μm. In some embodiments, theradius of curvature of the first end portion EA-2 is equal to 1.16 μmand the radius of curvature of the first end portion EA-1 is equal to1.91 μm. In another embodiment, the radius of curvature of the first endportion EA-2 is equal to 1.37 μm and the radius of the first end portionEA-1 is equal to 1.75 μm. In accordance with some embodiments, theradius of curvature of the first end portion EA-2 is equal to 1.08 μmand the radius of the first end portion EA-1 is equal to 1.65 μm.

In accordance with the embodiments of the present disclosure, the radiusof curvature of the end portions can be measured using the OM Toolssoftware. Specifically, the function of using three points to determinea circle can be applied to measure the radius of curvature. For example,as shown in FIG. 4 , the radius of curvatures r1 and r2 of the endportions EA can be measured by using the OM Tools software.

As described above, the radius of curvature of the first end portionEA-2 of the second semiconductor element 102-2 is less than that of thefirst end portion EA-1 of the first semiconductor element 102-1. Inother words, the first end portion EA-2 is shaper than the first endportion EA-1. According to the corona discharge mechanism, anelectrostatic discharge is more likely to occur at the secondsemiconductor element 102-2 in the peripheral region PR than the firstsemiconductor element 102-1 in the display region DR. Therefore, thedisplay region DR of the electronic device 10 may be protected fromdamage due to electrostatic discharge.

More specifically, in accordance with some embodiments, a ratio of theradius of curvature of the first end portion EA-2 to the radius ofcurvature of the first end portion EA-1 may be greater than or equal to0.3 and less than or equal to 0.9 (i.e. 0.3≤ratio of radius ofcurvature≤0.9), or greater than or equal to 0.4 and less than or equalto 0.8, such as 0.5, 0.6 or 0.7.

Next, refer to FIG. 5 , which is a cross-sectional diagram of theelectronic device along line segment A-A′ in FIG. 3 in accordance withsome embodiments of the present disclosure. It should be understood thatFIG. 5 only illustrates the substrate 100, the semiconductor element102, an insulating layer 404 and the first wire 202 for clarity.

As shown in FIG. 5 , the insulating layer 404 and the first wire 202 maybe disposed on the substrate 100, and the first wire 202 may be alsodisposed on the semiconductor element 102. In accordance with someembodiments, the insulating layer 404 and the first wire 202 may beconformally formed on the semiconductor element 102 and have an uneventop surface since the semiconductor element 102 is disposed below it. Inaccordance with some embodiments, the top surface of the first wire 202may have a protruding portion.

Refer to FIG. 6A and FIG. 6B, which are diagrams showing lines ofelectric force between elements of an electronic device in accordancewith some embodiments of the present disclosure. FIG. 6A and FIG. 6B areshown to further describe why the electrostatic discharge is more likelyoccurred at the second semiconductor element 102-2 in the peripheralregion PR than the first semiconductor element 102-1 in the displayregion DR, and they only illustrate parts of the semiconductor element102, the insulating layer 404 and the first wire 202 for clarity.

As shown in FIG. 6A and FIG. 6B, in accordance with some embodiments,the first wire 202 and the semiconductor elements 102 (the firstsemiconductor element 102-1 and the second semiconductor element 102-2)may be spaced apart by the insulating layer 404. The lines of electricforce (indicated as dashed lines) are generated between the first wire202 and the first semiconductor element 102-1, and between the firstwire 202 and the second semiconductor element 102-2. Since the distanceD1 between the first part P1-1 and the second part P1-2 of the firstsemiconductor element 102-1 is greater than the distance D2 between thefirst part P2-1 and the second part P2-2 of the second semiconductorelement 102-2, the density of the lines of electric force per unit areanear the first semiconductor element 102-1 is less than that near thesecond semiconductor element 102-2. Accordingly, static electric chargesaccumulate more easily in the second semiconductor element 102-2 thanthe first semiconductor element 102-1. An electrostatic discharge ismore likely to occur at the second semiconductor element 102-2 than thefirst semiconductor element 102-1.

Next, refer to FIG. 7 , which is a cross-sectional diagram of theelectronic device along line segment B-B′ in FIG. 3 in accordance withsome embodiments of the present disclosure. FIG. 7 is shown to describethe electrostatic discharge pathway in the electronic device.

As shown in FIG. 7 , the conductor 104 and a functional layer 402 may bedisposed on the substrate 100 and the functional layer 402 may cover theconductor 104. In addition, in accordance with the embodiments of thepresent disclosure, the expression “the first element covers the secondelement” includes the conditions where there is another element betweenthe first element and the second element, or there is no other elementbetween the first element and the second element. The semiconductorelement 102 (102-2) and the insulating layer 404 may be disposed on thefunctional layer 402 and the insulating layer 404 may cover thesemiconductor element 102. In addition, the first wire 202 and aninsulating layer 406 may be disposed on the insulating layer 404 and theinsulating layer 406 may cover the first wire 202.

In accordance with some embodiments, the functional layer 402 may serveas a buffer layer. The material of the functional layer 402 may includean organic material, an inorganic material, or a combination thereof,but it is not limited thereto. The organic material may includepolyethylene terephthalate (PET), polyethylene (PE), polyethersulfone(PES), polycarbonate (PC), polymethylmethacrylate (PMMA), isoprene,phenol-formaldehyde resin, benzocyclobutene (BCB), perfluorocyclobutane(PECB), or a combination thereof, but it is not limited thereto. Theinorganic material may include silicon nitride, silicon oxide, siliconoxynitride, or a combination thereof, but it is not limited thereto. Inaccordance with some embodiments, the material of the insulating layer404 and the insulating layer 406 may include silicon oxide, siliconnitride, silicon oxynitride, high-k dielectric material, other suitabledielectric materials, or a combination thereof, but it is not limitedthereto. For example, the high-k dielectric material may include, but isnot limited to, metal oxide, metal nitride, metal silicide, metalaluminate, zirconium silicate, zirconium aluminate, or a combinationthereof. Moreover, the material of the insulating layer 404 may be thesame as or different from the insulating layer 406.

In accordance with some embodiments, a thickness of the functional layer402 may be in a range from 0.1 μm to 1 μm (i.e. 0.1 μm≤thickness of thefunctional layer 402 1 km), or from 0.1 μm to 0.5 μm, for example, 0.2μm, 0.3 μm, or 0.4 μm. In accordance with some embodiments, a thicknessof the insulating layer 404 may be in a range from 0.05 μm to 0.8 μm(i.e. 0.05 μm≤thickness of the insulating layer 404≤0.8 μm), or from0.05 μm to 0.4 μm, for example, 0.1 μm, 0.2 μm, or 0.3 μm. In accordancewith some embodiments, a thickness of the insulating layer 406 may be ina range from 0.2 μm to 1.5 μm (i.e. 0.2 μm≤thickness of the insulatinglayer 406≤1.5 μm), or from 0.3 μm to 0.8 μm, for example, 0.4 μm, 0.5km, 0.6 μm, or 0.7 μm. In accordance with some embodiments, a ratio ofthickness of the functional layer 402 to thickness of the insulatinglayer 404 to thickness of the insulating layer 406 may be 2.7:1:5.6, butit is not limited thereto. Specifically, in accordance with someembodiments, the thickness of the functional layer 402 may be 0.278 μm,the thickness of the insulating layer 404 may be 0.104 μm, and thethickness of the insulating layer 406 may be 0.584 μm.

When the static electric charges overly accumulated in the first wire202, the electrostatic discharge may occur, and static electric chargesmay discharge from the first wire 202 to the semiconductor element 102(102-2). In accordance with some embodiments, the breakdown voltagebetween the first wire 202 and the semiconductor element 102 (102-2)(i.e. the voltage that is required to penetrate through the insulatinglayer 404) may be in a range from 75V to 95V, but it is not limitedthereto. Moreover, when static electric charges overly accumulated inthe semiconductor element 102 (102-2), the electrostatic discharge mayoccur, and static electric charges may discharge from the semiconductorelement 102 to the conductor 104. In accordance with some embodiments,the breakdown voltage between the semiconductor element 102 (102-2) andthe conductor 104 (i.e. the voltage that is required to penetratethrough the functional layer 402) may be in a range from 200V to 250V,but it is not limited thereto.

As described above, the conductor 104 may provide an additionalelectrostatic discharge pathway for the electronic device, and thereforethe electronic device may be protected from the damage due toelectrostatic discharge.

Next, refer to FIG. 8 , which is a cross-sectional diagram of theelectronic device along line segment C-C′ in FIG. 3 in accordance withsome embodiments of the present disclosure. FIG. 8 is shown to describethe electrostatic discharge pathway in the electronic device. Inaddition, the same or similar components (or elements) in the followingparagraph will be denoted by the same or similar reference numbers, andtheir materials, manufacturing methods and functions are the same orsimilar to those described above, and thus they will not be repeated inthe following context.

As shown in FIG. 8 , in the peripheral region PR, the second wire 206may be overlapped with some of the semiconductor elements 102 (e.g., thefourth semiconductor element 102-4). The second wire 206 may be disposedon the insulating layer 406. The semiconductor element 102 may beoverlapped with both the conductor 104 and the second wire 206 in thenormal direction of the substrate 100 (e.g., the Z direction in thedrawing).

Similarly, when static electric charges overly accumulated in the firstwire 202, the electrostatic discharge may occur, and static electriccharges may discharge from the first wire 202 to the semiconductorelement 102 (102-4). In addition, static electric charges may dischargefrom the first wire 202 to the second wire 206. In accordance with someembodiments, the breakdown voltage between the first wire 202 and thesecond wire 206 (i.e. the voltage that is required to penetrate throughthe insulating layer 406) may be in a range from 400V to 450V, but it isnot limited thereto. Moreover, when static electric charges overlyaccumulated in the semiconductor element 102 (102-4), the electrostaticdischarge may occur, and static electric charges may discharge from thesemiconductor element 102 (102-4) to the conductor 104, or to the secondwire 206. In accordance with some embodiments, the breakdown voltagebetween the semiconductor element 102 (102-4) and the second wire 206(i.e. the voltage that is required to penetrate through the insulatinglayer 404 and the insulating layer 406) may be in a range from 495V to515V, but it is not limited thereto.

As described above, both the conductor 104 and the second wire 206 mayprovide additional electrostatic discharge pathways for the electronicdevice, and therefore the electronic device may be protected from thedamage due to electrostatic discharge.

Next, refer to FIG. 9A and FIG. 9B. FIG. 9A and FIG. 9B are respectivelya bottom-view diagram and a top-view diagram of a portion of anelectronic device in accordance with some other embodiments of thepresent disclosure.

As shown in FIG. 9A and FIG. 9B, in accordance with some embodiments,the first end portion EA and/or the second portion EB of thesemiconductor element 102 may include a protruding portion PP. Theprotruding portion PP may extend along the direction that issubstantially parallel to the extending direction of the first wire 202(e.g., the X direction in the drawing). In accordance with someembodiments, the protruding portion PP of the first end portion EA andthe protruding portion PP of the second end portion EB may face towarddifferent directions. For example, the protruding portion PP of thefirst end portion EA and the protruding portion PP of the second endportion EB may face toward opposite directions.

Next, refer to FIG. 9C, which is a bottom-view diagram of a portion ofan electronic device in accordance with some other embodiments of thepresent disclosure. As shown in FIG. 9C, in accordance with someembodiments, the protruding portion PP of the first end portion EA andthe protruding portion PP of the second end portion EB may face towardthe same direction.

Next, refer to FIG. 10A and FIG. 10B, which are diagrams showing linesof electric force between elements of an electronic device in accordancewith some other embodiments of the present disclosure. FIG. 10A and FIG.10B are shown to further describe why the electrostatic discharge ismore likely to occur between the first end portion EA and the second endportion EB of the semiconductor element 102 in the peripheral region PRthan between the first end portion EA and the second end portion EB ofthe semiconductor element 102 in the display region DR.

Referring to FIG. 10A and FIG. 10B, and also referring to FIG. 4 , inaccordance with some embodiments, the second wire 206 and thesemiconductor elements 102 may be spaced apart by the insulating layer404 and the insulating layer 406. The lines of electric force (indicatedas dashed lines) are generated between the second wire 206 and thesemiconductor element 102. Since the distance D3 between the first endportion EA and the second end portion EB of the semiconductor element102 in display region DR (as shown in FIG. 10A) is greater than thedistance D4 between the first end portion EA and the second end portionEB of the semiconductor element 102 in the peripheral region PR (asshown in FIG. 10B), the density of the lines of electric force per unitarea near the first end portion EA and the second end portion EB in thedisplay region DR is less than that near the first end portion EA andthe second end portion EB in the peripheral region PR. Accordingly,static electric charges accumulate more easily in the end portions ofthe semiconductor element 102 in the peripheral region PR than the endportions of the semiconductor element 102 in the display region DR.

To summarize, in accordance with some embodiments, the providedelectronic device has a structural design that renders the electrostaticdischarge more likely to occur at the semiconductor element in theperipheral region than in the display region. The protection effect forelectrostatic discharge of the electronic device may be improved.

Although some embodiments of the present disclosure and their advantageshave been described in detail, it should be understood that variouschanges, substitutions and alterations can be made herein withoutdeparting from the spirit and scope of the disclosure as defined by theappended claims. Moreover, the scope of the present application is notintended to be limited to the particular embodiments of the process,machine, manufacture, composition of matter, means, methods and stepsdescribed in the specification. As one of ordinary skill in the art willreadily appreciate from the present disclosure, processes, machines,manufacture, compositions of matter, means, methods, or steps, presentlyexisting or later to be developed, that perform substantially the samefunction or achieve substantially the same result as the correspondingembodiments described herein may be utilized according to the presentdisclosure. Accordingly, the appended claims are intended to includewithin their scope such processes, machines, manufacture, compositionsof matter, means, methods, or steps. In addition, each claim constitutesan individual embodiment, and the claimed scope of the presentdisclosure also includes the combinations of the claims and embodiments.The features of the various embodiments can be used in any combinationas long as they do not depart from the spirit and scope of the presentdisclosure. The scope of protection of present disclosure is subject tothe definition of the scope of the appended claims.

What is claimed is:
 1. An electronic device, comprising: a substrate; afirst wire disposed on the substrate; a second wire disposed on thesubstrate; a third wire disposed on the substrate and adjacent to thesecond wire, wherein the second wire and the third wire cross the firstwire, and a width of the third wire is less than a width of the secondwire; a first semiconductor element overlapped the first wire and thethird wire; a second semiconductor element overlapped the first wire andadjacent to the first semiconductor element; and a conductor disposedbelow the second semiconductor element, wherein the first semiconductorelement and the second semiconductor element each crosses the first wirein two parts and the two parts of the second semiconductor element isless than the two parts of the first semiconductor element in distance,wherein the conductor is overlapped with at least one of the two partsof the second semiconductor element.
 2. The electronic device as claimedin claim 1, wherein the two parts of the second semiconductor element isless than half of the two parts of the first semiconductor element indistance.
 3. The electronic device as claimed in claim 1, wherein aratio of a distance between the two parts of the second semiconductorelement to a distance between the two parts of the first semiconductorelement is greater than or equal to 0.2 and less than or equal to 0.7.4. The electronic device as claimed in claim 1, wherein the conductor isat least partially overlapped with the first wire.
 5. The electronicdevice as claimed in claim 1, wherein a width of the secondsemiconductor element that is overlapped with the conductor and thefirst wire is less than a width of the second semiconductor element thatis overlapped with the conductor but not the first wire.
 6. Theelectronic device as claimed in claim 1, wherein each of the firstsemiconductor element and the second semiconductor element has a firstend portion and a second end portion, and the first end portion issmaller than the second end portion in size.
 7. The electronic device asclaimed in claim 6, wherein the first end portion of the secondsemiconductor element is less than the first end portion of the firstsemiconductor element in radius of curvature.
 8. The electronic deviceas claimed in claim 6, wherein the first semiconductor element iselectrically connected to an electrode layer through a via located inthe first end portion.
 9. The electronic device as claimed in claim 1,wherein the second wire is at least partially overlapped with the secondsemiconductor element.
 10. The electronic device as claimed in claim 1,wherein the third wire is electrically connected to the firstsemiconductor element.
 11. The electronic device as claimed in claim 1,wherein the second semiconductor element comprises low temperaturepolysilicon.
 12. The electronic device as claimed in claim 1, whereinthe first wire is a scan line.
 13. The electronic device as claimed inclaim 1, wherein the second wire is a common line.
 14. The electronicdevice as claimed in claim 1, wherein the third wire is a data line. 15.The electronic device as claimed in claim 1, which is a display device.16. An electronic device, comprising: a substrate; a first wire disposedon the substrate; a second wire disposed on the substrate; a third wiredisposed on the substrate and adjacent to the second wire, wherein thesecond wire and the third wire cross the first wire, and a width of thethird wire is less than a width of the second wire; a firstsemiconductor element overlapped the first wire and the third wire; asecond semiconductor element overlapped the first wire and adjacent tothe first semiconductor element; and a third semiconductor elementoverlapped the first wire, wherein the second semiconductor element isdisposed between the first semiconductor element and the thirdsemiconductor element, wherein the first semiconductor element and thesecond semiconductor element each crosses the first wire in two partsand the two parts of the second semiconductor element is less than thetwo parts of the first semiconductor element in distance.
 17. Theelectronic device as claimed in claim 16, wherein the second wire isoverlapped with the third semiconductor element.
 18. An electronicdevice, comprising: a substrate; a first wire disposed on the substrate;a second wire disposed on the substrate; a third wire disposed on thesubstrate and adjacent to the second wire, wherein the second wire andthe third wire cross the first wire, and a width of the third wire isless than a width of the second wire; a first semiconductor elementoverlapped the first wire and the third wire; and a second semiconductorelement overlapped the first wire and adjacent to the firstsemiconductor element; wherein the first semiconductor element and thesecond semiconductor element each crosses the first wire in two partsand the two parts of the second semiconductor element is less than thetwo parts of the first semiconductor element in distance, wherein eachof the first semiconductor element and the second semiconductor elementhas a first end portion and a second end portion, and the first endportion is smaller than the second end portion in size, wherein adistance between the first end portion and the second end portion of thesecond semiconductor element is less than a distance between the firstend portion and the second end portion of the first semiconductorelement.
 19. The electronic device as claimed in claim 18, wherein aratio of the distance between the first end portion and the second endportion of the second semiconductor element to the distance between thefirst end portion and the second end portion of the first semiconductorelement is greater than or equal to 0.4 and less than or equal to 1.